This model presents the utilization of a compact model of CoFeB/MgO double-barrier MTJ (DMTJ), a system exhibiting the best tunnel magneto-resistance ratio and switching performance. Furthermore, Combination of double-barrier and synthetic double-free layers can heighten the STT effect and enhance the thermal stability simultaneously. Larger STT switching efficiency, compared with conventional MTJ, can thus be realized. The MTJ key structure consists of Co20Fe60B20(1.2)/MgO(0.4)/Co20Fe60B20(1.6)/Ta(0.4)/Co20Fe60B20(1.0)/MgO(0.8)/Co20Fe60B20(1.2) (numbers are nominal thicknesses in nanometers). It integrates the physical models of static, dynamic; many experimental parameters are directly included to improve the agreement of simulation with measurements.
1. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China
2. Institut d'Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
1. G. D. Wang, Y. Zhang, J. K. Wang, Z. Z. Zhang, K. Zhang, Z. Y. Zheng, J. O. Klein, D. Ravelosona, Y. G. Zhang and W. S Zhao, “Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction With Enhanced Thermal Stability Recording Structure,” Early Access. DOI: 10.1109/TED.2019.2906932
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