Magnetic tunnel junctions (MTJ) with low switching current, high thermal stability, and small device size, are strongly preferred for low-power, high-reliability, high-density spintronic memory and logic applications. The research of MTJs from shape in-plane magnetic anisotropy (s-IMA) to interfacial perpendicular magnetic anisotropy (i-PMA) has successfully paved the way down to 20-nm scale, below which, however, the i-PMA approach reaches a physical limit in sustaining sufficient thermal stability while achieving low-power spin transfer torque (STT) switching. Recently, studies have reported a new approach to pave the way toward sub-10 nm MTJs satisfying the requirements by revisiting shape perpendicular magnetic anisotropy (s-PMA). In this file, we present a compact model of the sub-10 nm s-PMA MTJ device, which captures both the static and dynamic physical behaviors. This model is SPICE-compatible for hybrid MTJ/CMOS circuit designs. This work is expected to push forward the development of sub-10 nm scale MTJ based spintronic memory and logic circuits.
1. Fert Beijing Institute, BDBC and School of Microelectronics, Beihang University, Beijing 100191, China
Download model file (Click to see download counts)
Download manual file (Click to see download counts)
NOTICE: if you cannot download with Chrome, please allow the pop-up window to be shown for this site, or open the download link in a new tab. If neither of the option work, please try to use internet explorer to download.
1. H. Wang, W. Kang, Y. Zhang and W. Zhao, "Modeling and Evaluation of Sub-10-nm Shape Perpendicular Magnetic Anisotropy Magnetic Tunnel Junctions," IEEE Transactions on Electron Devices. DOI: 10.1109/TED.2018.2877938
Have any other questions? Send an e-mail to us!
