This model mainly describes the I-V characteristic and memristive behavior of the ferroelectric tunnel junction. The I-V characteristic is modeled by Gruverman model and Fowler-Nordheim tunneling, respectively, at the low and high voltage. By setting the domain percentage to be a state variable, the memristive behavior is described by Merz’s law, KAI model and creep process model. This model can be used to simulate the FTJ-based non-volatile memory/logic circuits and neuromorphic systems.
1. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China
2. Institut d'Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
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1. Z. Wang, W. Zhao, W. Kang, Y. Zhang, J. O. Klein, D. Ravelosona, and C. Chappert, "Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation," Appl. Phys. Lett., vol. 104, no. 5, pp. 053505, 2014. DOI: 10.1063/1.4864270
2. Z. Wang, W. Zhao, W. Kang, A. Bouchenak-Khelladi, Y. Zhang, Y. Zhang, J. O. Klein, D. Ravelosona, and C. Chappert, "A physics-based compact model of ferroelectric tunnel junction for memory and logic design," J. Phys. D: Appl. Phys., vol. 47, no. 4, pp. 045001, 2014. DOI: 10.1088/0022-3727/47/4/045001
3. Zhaohao Wang. Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque. Thesis, Universite Paris-Saclay, 2015.
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