Magnetic tunnel junctions (MTJ) with low switching current, high thermal stability, and small device size, are strongly preferred for low-power, high-reliability, high-density spintronic memory and logic applications. The research of MTJs from shape in-plane magnetic anisotropy (s-IMA) to interfacial perpendicular magnetic anisotropy (i-PMA) has successfully paved the way down to 20-nm scale, below which, however, the i-PMA approach reaches a physical limit in sustaining sufficient thermal stability while achieving low-power spin transfer torque (STT) switching. Recently, studies have reported a new approach to pave the way toward sub-10 nm MTJs satisfying the requirements by revisiting shape perpendicular magnetic anisotropy (s-PMA). In this file, we present a compact model of the sub-10 nm s-PMA MTJ device, which captures both the static and dynamic physical behaviors. This model is SPICE-compatible for hybrid MTJ/CMOS circuit designs. This work is expected to push forward the development of sub-10 nm scale MTJ based spintronic memory and logic circuits.
1. Fert Beijing Institute, BDBC and School of Microelectronics, Beihang University, Beijing 100191, China
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1. H. Wang, W. Kang, Y. Zhang and W. Zhao, "Modeling and Evaluation of Sub-10-nm Shape Perpendicular Magnetic Anisotropy Magnetic Tunnel Junctions," IEEE Transactions on Electron Devices. DOI: 10.1109/TED.2018.2877938
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